| PART |
Description |
Maker |
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| NEZ1011-8E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| ELM5964-4PST |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
|
| FLM1213-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
FUJITSU LTD
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FPD7612-000SQ |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
RF MICRO DEVICES INC
|
| CFH2162-P509 |
2.3 to 2.5 GHz
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband
MIMIX BROADBAND INC
|
| CF739E6433 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
TRIQUINT SEMICONDUCTOR INC
|
|
